PART |
Description |
Maker |
MV831 MV832 MV830 MV840 MV833 MV834 MV835 MV836 MV |
ABRUPT VARACTOR DIODES
|
KNOX[Knox Semiconductor, Inc] KNOX[Knox Semiconductor Inc]
|
1N5703 1N5700 1N5705 1N5699 1N5695 1N5696 1N5701 1 |
GENERAL PURPOSE ABRUPT VARACTOR DIODES 一般用途突变的变容二极
|
KNOX[Knox Semiconductor Inc] KNOX[Knox Semiconductor, Inc] TE Connectivity, Ltd.
|
AT6020 |
SILICON ABRUPT JUNCTION TUNING VARACTOR VHF BAND, 39 pF, 70 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
Advanced Semiconductor, Inc.
|
AT6022B-15 |
SILICON ABRUPT JUNCTION VARACTOR VHF BAND, 56 pF, 70 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
Advanced Semiconductor, Inc.
|
GC1310 KV1963A KV1953A KV1923A KV1913A1 KV2123 KV1 |
C BAND, 3.9 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒Hyperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM C BAND, 16.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 1.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation MICROSEMI CORP-LOWELL
|
AT12015-21 |
SILICON ABRUPT VARACTOR DIODE
|
ASI[Advanced Semiconductor]
|
1N5709B |
From old datasheet system ABRUPT VARACTOR DIODE
|
ASI[Advanced Semiconductor]
|
AT9017-10 |
SILICON ABRUPT JUNCTION TUNING VARACTOR Diode
|
Advanced Semiconductor ASI
|
AT6019-10 AT6017-10 AT601910 |
From old datasheet system SILICON ABRUPT JUNCTION TUNING VARACTOR
|
ASI[Advanced Semiconductor]
|
AT6019M |
From old datasheet system SILICON ABRUPT JUNCTION TUNING VARACTOR
|
ASI[Advanced Semiconductor]
|
AT9019-10 AT901910 |
SILICON ABRUPT JUNCTION TUNING VARACTOR From old datasheet system Diode
|
Advanced Semiconductor ASI
|
MV1405 |
From old datasheet system Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode
|
ASI[Advanced Semiconductor]
|